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Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adato ...

β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85?eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped β-Ga ...

Ga2O3 is a promising semiconductor for deep ultraviolet optoelectronics, because of its ultrawide bandgap of 4.85 eV. Here, the bandgap modulation of (AlxGa1?x)2O3 thin films through varying Al contents is reported –and the achievement of high-performance p ...

Altering the n-type conductivity and optical properties of ultra-wide bandgap β-Ga2O3 by impurity doping has been a topic of research interest in the semiconductor field. Simultaneously, β-Ga2O3 with a monoclinic structure has exhibited interesting anisotrop ...

Ga2O3 is emerging as a promising wide-band-gap semiconductor for highpower electronics and deep ultraviolet optoelectronics. Alloying Ga2O3 with In2O3 leads to the modulation of the band gaps and possible carrier confinement achieved at the heterointerface. In ...

The introduction of different elements into semiconductors to achieve conductivity control of n-type doping has considerable scientific significance and practical application prospects, which can further promote their extensive application in the field of elec ...

V impurities were intentionally introduced into β-Ga2O3 crystals as n-type dopants to improve the n-type conductivity of single-crystal substrates. A high-quality 0.20 mol% V-doped β-Ga2O3 single crystal was fabricated, and the effects of air annealing on the ...